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AlSiC composite materials in IGBT base plates
AlSiC is a metal matrix composite consisting the aluminum matrix with silicon carbide particle.By combining ceramic and metal together, the AlSiC metal matrix composite is created, a new material actually resembling both.The aluminum silicon carbide composites were fabricated by pressure-infiltrating porous silicon carbide particle performed units.Based on its silicon aluminum carbide(AlSiC) metal matrix material,especially for insulated gate bipolar transistor (IGBT) modules used in high-power traction, power control, hybrid electric vehicle power systems, and fly-by-wire applications.
On account of high thermal conductivity(TC),low coefficient of thermal expansion (CTE),high stiffness and light weight features, the AlSiC is a ideal material used for manufacturing power electronics base plates and substrates. AlSiC is a lightweight material (1/3 that of Cu), which makes it a suitable for weight-sensitive IGBT applications. The low CTE perfectly matches with that of electric chips'.In high-power applications (>1200 V/ 400 A), the operation reliability of power module with AlSiC base plate is 10 times as high as that with Cu base plate.AlSiC also delivers higher strength and stiffness than Cu, which combined with its lightweight, makes AlSiC assemblies more tolerant to shock and vibration. In addition,AlSiC meets the requirements of the Restriction of Hazardous Substances (RoHS) directive.